QS5U33
Transistor
Electrical characteristic curves
10
V DS = ? 10V
1000
V GS = ? 10V
1000
V GS = ? 4.5V
1
Pulsed
Pulsed
Pulsed
0.1
0.01
0.001
Ta = 125 ° C
75 ° C
25 ° C
? 25 ° C
100
Ta = 125 ° C
75 ° C
25 ° C
? 25 ° C
100
Ta = 125 ° C
75 ° C
25 ° C
? 25 ° C
0.0001
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
10
0.1
1
10
10
0.1
1
10
Gate ? Source Voltage : ? V GS [ V ]
Fig.1 Typical Transfer Characteristics
Drain Current : ? I D [ A ]
Fig.2 Static Drain ? Source On ? State
Resistance vs.Drain Current
Drain Current : ? I D [ A ]
Fig.3 Static Drain ? Source On ? State
Resistance vs.Drain Current
1000
100
Ta = 125 ° C
75 ° C
25 ° C
? 25 ° C
V GS = ? 4.0V
Pulsed
400
350
300
250
200
150
I D=? 1A
? 2A
Ta=25 C
Pulsed
10
1
0.1
Ta = 125 ° C
75 ° C
25 ° C
? 25 ° C
V GS =0V
Pulsed
100
50
10
0.1
1 10
Drain Current : ? I D [ A ]
Fig.4 Static Drain ? Source On ? State
Resistance vs.Drain ? Current
0
0 5 10 15
Gate ? Source Voltage : ? V GS [ V ]
Fig.5 Static Drain ? Source On ? State
Resistance vs.Gate ? Source Voltage
0.01
0
0.5 1.0
Source ? Drain Voltage : ? V SD [ V ]
Fig.6 Reverse Drain Current
vs. Source-Drain Current
1.5
1000
Ta=25 C
f=1MHZ
V GS =0V
C iss
1000
100
t f
Ta=25 C
V DD = ? 15V
V GS = ? 10V
R G =10 ?
Pulsed
10
8
6
Ta=25 C
V DD = ? 15V
I D = ? 1A
R G =10 ?
Pulsed
100
t d ( off )
t r
4
C oss
C rss
10
t d ( on )
2
10
0.01
0.1
1
10
100
1
0.01
0.1
1
10
0
0
1
2
3
4
5
6
Drain ? Source Voltage : ? V DS [ V ]
Fig.7 Typical Capactitance
vs.Drain ? Source Voltage
Drain Current : ? I D [ A ]
Fig.8 Switching Characteristics
Total Gate Charge : Qg [ nC ]
Fig.9 Dynamic Input Characteristics
3/4
相关PDF资料
QS5U34TR MOSFET N-CH 20V 1.5A TSMT5
QS5U36TR MOSFET N-CH 20V 2.5A TSMT5
QS6J11TR MOSFET 2P-CH 12V 2A TSMT6
QS6K1TR MOSFET 2N-CH 30V 1A TSMT6
QS6K21TR MOSFET N-CH 45V 1A TSMT6
QS6M3TR MOSFET N+P 30,20V 1.5A TSMT6
QS6M4TR MOSFET N+P 30,20V 1.5A TSMT6
QS6U22TR MOSFET P-CH 20V 1.5A TSMT6
相关代理商/技术参数
QS5U34 制造商:ROHM 制造商全称:Rohm 功能描述:1.8V Drive Nch+SBD MOSFET
QS5U34TR 功能描述:MOSFET N Chan20V1.5A Load Switching RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
QS5U36 制造商:ROHM 制造商全称:Rohm 功能描述:1.5V Drive Nch+SBD MOSFET
QS5U36TR 功能描述:MOSFET N Chan20V2.5A Load Switching RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
QS5V9912JRC 制造商:QUALITY SEMI 功能描述:
QS5V991-7JR1 制造商:QSI 功能描述:
QS5V99320QC 制造商:QUALITY 功能描述:QS5V993-2QC
QS5W1 制造商:ROHM 制造商全称:Rohm 功能描述:Midium Power Transistors (30V / 3A)